Functional Description
B
HYS
I
CC(H)
I
CC(L)
B+
B
I+
0
(A) Hysteresis curve for A1150, A1152, A1155, and A1157
B
HYS
I
CC(H)
I
CC(L)
B+
I+
B
0
(B) Hysteresis curve for A1153, A1156, and A1158
The A1150, A1152, A1155, and A1157 output, I
CC
, switches low
after the magnetic field at the Hall sensor IC exceeds the oper-
ate point threshold, B
OP
. When the magnetic field is reduced to
below the release point threshold, B
RP
, the device output goes
high. This is shown in figure 1, panel A.
In the case of the reverse output polarity, as in the A1153, A1156,
and A1158, the device output switches high after the magnetic
field at the Hall sensor IC exceeds the operate point threshold,
B
OP
. When the magnetic field is reduced to below the release
point threshold, B
RP
, the device output goes low (panel B).
The difference between the magnetic operate and release points
is called the hysteresis of the device, B
HYS
. This built-in hyster-
esis allows clean switching of the output even in the presence of
external mechanical vibration and electrical noise.
Figure 1. Alternative switching behaviors are available in the A115x device family. On the horizontal axis, the B+ direction indicates
increasing south polarity magnetic field strength, and the B direction indicates decreasing south polarity field strength (including the
case of increasing north polarity).
Chopper-Stabilized, Two Wire
Hall-Effect Switches
A1150, A1152, A1153, A1155,
A1156, A1157, and A1158
7
Allegro MicroSystems, LLC
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
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